High-Bandwidth Memory Chips : hbm3e 12h

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rephrase this content to 3000 words High-Bandwidth Memory Chips : hbm3e 12h фото, картинка, изображение, дизайн

Samsung has developed the industry’s first 12-stack HBM3E DRAM and the highest-capacity HBM product to date. The HBM3E 12H provides an all-time high bandwidth of up to 1,280 gigabytes per second (GB/s) and an industry-leading capacity of 36 gigabytes (GB). Compared to the 8-stack HBM3 8H, both aspects have improved by more than 50%. The new memory solution is based on Samsung’s 4th generation 10nm-class (14nm) fabrication technology, which uses extreme ultraviolet (EUV) lithography. It also applies advanced thermal compression non-conductive film (TC NCF), which allows the 12-layer products to have the same height specification as 8-layer ones. The technology enhances vertical density and thermal properties, while also enabling the use of bumps of various sizes between the chips for better signaling and heat dissipation.

The HBM3E 12H is expected to be an optimal solution for future systems that require more memory, especially for artificial intelligence (AI) and high-performance computing (HPC) applications. Samsung estimates that its 12-Hi HBM3E 36 GB modules can increase the average speed for AI training by 34% and expand the number of simultaneous users of inference services by more than 11.5 times. Samsung has already begun providing samples of the HBM3E 12H to customers, with mass production scheduled to commence in the first half of this year. However, the company has not disclosed the pricing or availability of the new memory products yet.

Image Credit: Samsung

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